Aluminium gallium arsenide

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Aluminium gallium arsenide
Systematic name	Aluminium gallium arsenide
Other names	xxx, xxx
Molecular formula	XxXxXx
Molar mass	xx.xx g/mol
CAS number	[xx-xx-xx]
Density	x.xxx g/cm3
Solubility (water)	x.xx g/l
Melting point	xx.x °C
Boiling point	xx.x °C
[Chemical infoboxDisclaimer and references]

Aluminium gallium arsenide (also Aluminum gallium arsenide) (Al_xGa_1-xAs) is a semiconductor material with very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy between GaAs and AlAs.

The bandgap varies between 1.42 eV (GaAs) and 2.16 eV (AlAs). For x < 0.4, the bandgap is direct.

The formula AlGaAs should be considered an abbreviated form of the above, rather than any particular ratio.

Aluminium gallium arsenide is used as a barrier material in GaAs based heterostructure devices. The AlGaAs layer confines the electrons to a gallium arsenide region. An example of such a device is a quantum well infrared photodetector (QWIP).

See also

• Aluminium arsenide
• Gallium arsenide

External link

• [Extensive site on the physical properties of aluminium gallium arsenide]

• For a full list of external links to MSDSs, spectroscopic data, commercial chemicals suppliers etc. for this compound, see [Chemical sources].

 

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